polysilicon-on-oxide region
- polysilicon-on-oxide region
- polikristalinio silicio sritis ant oksido sluoksnio
statusas T sritis radioelektronika
atitikmenys: angl. polysilicon-on-oxide region
vok. Polysilizium-auf-Oxid-Bereich, m
rus. область поликристаллического кремния на оксидном слое, f
pranc. région de silicium polycristallin sur couche d'oxyde, f
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
Look at other dictionaries:
région de silicium polycristallin sur couche d'oxyde — polikristalinio silicio sritis ant oksido sluoksnio statusas T sritis radioelektronika atitikmenys: angl. polysilicon on oxide region vok. Polysilizium auf Oxid Bereich, m rus. область поликристаллического кремния на оксидном слое, f pranc.… … Radioelektronikos terminų žodynas
Depletion region — In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region or the space charge region, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers… … Wikipedia
Polysilizium-auf-Oxid-Bereich — polikristalinio silicio sritis ant oksido sluoksnio statusas T sritis radioelektronika atitikmenys: angl. polysilicon on oxide region vok. Polysilizium auf Oxid Bereich, m rus. область поликристаллического кремния на оксидном слое, f pranc.… … Radioelektronikos terminų žodynas
polikristalinio silicio sritis ant oksido sluoksnio — statusas T sritis radioelektronika atitikmenys: angl. polysilicon on oxide region vok. Polysilizium auf Oxid Bereich, m rus. область поликристаллического кремния на оксидном слое, f pranc. région de silicium polycristallin sur couche d oxyde, f … Radioelektronikos terminų žodynas
область поликристаллического кремния на оксидном слое — polikristalinio silicio sritis ant oksido sluoksnio statusas T sritis radioelektronika atitikmenys: angl. polysilicon on oxide region vok. Polysilizium auf Oxid Bereich, m rus. область поликристаллического кремния на оксидном слое, f pranc.… … Radioelektronikos terminų žodynas
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Chemical vapor deposition — DC plasma (violet) enhances the growth of carbon nanotubes in this laboratory scale PECVD apparatus. Chemical vapor deposition (CVD) is a chemical process used to produce high purity, high performance solid materials. The process is often used in … Wikipedia
Lau Wai Shing — Wai Shing Lau (simplified Chinese name: 刘偉成, born July 29, 1955 in Hong Kong) is also known as Lau Wai Shing. The family name of Lau is sometimes spelled as Liu like Liu Bang (founder of the Han dynasty) or Liu Shaoqi or Liu Bocheng. This is… … Wikipedia
Microelectromechanical systems — (MEMS) (also written as micro electro mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems) is the technology of very small mechanical devices driven by electricity; it merges at the nano scale into… … Wikipedia